The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Aug. 25, 2009
Hyeong-tag Jeon, Seoul, KR;
Sang-hyun Woo, Seoul, KR;
Hyung-chul Kim, Chungcheongbuk-do, KR;
Chin-wook Chung, Seoul, KR;
Hyeong-Tag Jeon, Seoul, KR;
Sang-Hyun Woo, Seoul, KR;
Hyung-Chul Kim, Chungcheongbuk-do, KR;
Chin-Wook Chung, Seoul, KR;
Abstract
Provided is an apparatus for generating remote plasma, which can improve thin-film quality by preventing an arc at a bias electrode. The apparatus includes a radio frequency (RF) electrode installed inside an upper portion of a chamber, a bias electrode installed apart from the RF electrode, and including a plurality of through holes through which plasma passes, wherein a bias power is supplied to the bias electrode, a plasma generating unit formed between the RF electrode and the bias electrode, wherein a plasma gas is supplied to the plasma generating unit, and a ground electrode installed under and spaced apart from the bias electrode, and including plasma through holes corresponding to the through holes of the bias electrode, wherein a pulsed DC bias of a second voltage level, which has a first voltage level periodically, is applied to the bias electrode.