The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Aug. 09, 2010
Young Suk Kim, Kawasaki, JP;
Young Suk Kim, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method for fabricating a semiconductor device to which a stress technique is applied and in which a leakage current caused by silicidation can be suppressed. The method includes forming an isolation region in a semiconductor substrate; forming a gate electrode over an element region defined by the isolation region formed in the semiconductor substrate; and forming a semiconductor lager in the element region at both sides of the gate electrode apart from at least part of the isolation region. By doing so, the formation of a spike near the isolation region is suppressed even if a silicide layer is formed. Accordingly, a leakage current caused by such a spike can be suppressed.