The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8207003 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 26, 2012

Filed:

Apr. 23, 2007
Applicants:

Naoki Fukunaga, Munakata, JP;

Hiroshi Osawa, Chiba, JP;

Inventors:

Naoki Fukunaga, Munakata, JP;

Hiroshi Osawa, Chiba, JP;

Assignee:

Showa Denko K.K., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (Vf) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide filmincluding a dopant is laminated on a p-type semiconductor layerof a gallium nitride-based compound semiconductor device. The transparent conductive oxide filmis subjected to a laser annealing process using a laser after the lamination of the transparent conductive oxide film


Find Patent Forward Citations

Fukunaga, Naoki. (2012). Method of manufacturing gallium nitride-based compound semiconductor light-emitting device, gallium nitride-based compound semiconductor light-emitting device, and lamp (U.S. Patent No. 8207003). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8207003

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