The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Aug. 21, 2009
Hikaru Kokura, Kawasaki, JP;
Hikaru Kokura, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A system for manufacturing a semiconductor device that has a gate electrode and a pair of diffusion layers formed in a semiconductor substrate on sides of the gate electrode, the system including structure for forming an insulating film and a gate electrode on a semiconductor substrate, obtaining a thickness of an affected layer formed in a surface of the semiconductor substrate, forming a pair of diffusion layers by injecting an impurity element into the semiconductor substrate in areas flanking the gate electrodes based on a predetermined injection parameter, performing activating heat treatment based on a predetermined heat treatment parameter, and deriving the injection parameter or heat treatment parameter in response to the obtained thickness of the affected layer such that the diffusion layers are set to a predetermined sheet resistance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile