Non-volatile semiconductor memory device capable of preventing over-programming

Abstract

According to one embodiment, a semiconductor memory device includes a memory cell array, a data memory circuit, a power generation circuit, and a controller. In the memory cell array, a plurality of memory cells which store two-or-more-bit data are arrayed in a matrix. When data is written to all memory cells connected to selected word lines, the controller performs a write operation with a write voltage obtained by adding the step-up voltage to the write voltage until a write count indicating a number of times by which writing is performed reaches a first write count. When the first write count is exceeded, the controller controls whether the step-up voltage is to be added or not, for each write operation.