The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2012

Filed:

Aug. 17, 2010
Applicants:

Hack Seob Shin, Suwon-si, KR;

Kyoung Hwan Park, Seoul, KR;

Young OK Hong, Icheon-si, KR;

Yu Jin Park, Gyeongju-si, KR;

Inventors:

Hack Seob Shin, Suwon-si, KR;

Kyoung Hwan Park, Seoul, KR;

Young Ok Hong, Icheon-si, KR;

Yu Jin Park, Gyeongju-si, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A flash memory device includes a substrate; a cell stack having a semiconductor layer for providing junction areas and channel areas and an interlayer isolation layer for insulating the semiconductor layer, wherein the semiconductor layer and the interlayer isolation layer are repeatedly stacked; an array of gate columns, the gate columns penetrating through the cell stack, perpendicular to the substrate; and a trap layered stack introduced into an interface between the gate columns and the cell stack to store charge.


Find Patent Forward Citations

Loading…