The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2012
Filed:
Apr. 05, 2010
Joshua Yang, Palo Alto, CA (US);
Feng Miao, Mountain View, CA (US);
Wei Wu, Palo Alto, CA (US);
Shih-yuan Wang, Palo Alto, CA (US);
R. Stanley Williams, Portola Valley, CA (US);
Joshua Yang, Palo Alto, CA (US);
Feng Miao, Mountain View, CA (US);
Wei Wu, Palo Alto, CA (US);
Shih-Yuan Wang, Palo Alto, CA (US);
R. Stanley Williams, Portola Valley, CA (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
A graphene-based memristor includes a first electrode, a defective graphene layer adjacent the first electrode, a memristive material that includes a number of ions adjacent the defective graphene layer, a second electrode adjacent the memristive material, and a voltage source that generates an electric field between the first and the second electrodes. Under the influence of the electric field, ions in the memristive material form an ion conducting channel between the second electrode and the defective graphene layer.