The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2012
Filed:
Oct. 27, 2005
Daisuke Hanaoka, Kyoto, JP;
Masafumi Kondo, Kyoto, JP;
Susumu Ohmi, Kyoto, JP;
Kunihiro Takatani, Mihara, JP;
Yoshika Kaneko, Funabashi, JP;
Daisuke Hanaoka, Kyoto, JP;
Masafumi Kondo, Kyoto, JP;
Susumu Ohmi, Kyoto, JP;
Kunihiro Takatani, Mihara, JP;
Yoshika Kaneko, Funabashi, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer includes, as a main component, at least one oxide of a metal selected from a group of metals consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium.