The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2012
Filed:
Jun. 16, 2010
Wei Yang, Minnetonka, MN (US);
Alex Gu, Plymouth, MN (US);
Honeywell International, Inc., Morristown, NJ (US);
Abstract
A chip-scale ion-trap mass spectrometer driven by a monolithic photodiode array and a method of fabricating the same. A high-voltage photovoltaic source is located in proximity to the ion-trap mass spectrometer structure. The high-voltage photovoltaic source includes monolithically fabricated and serially connected photodiodes. An external light source illuminates the photodiodes to generate a high voltage across the photodiode array. An RF voltage modulation is attained by modulating the light source at a desired RF frequency. The high-voltage photodiode array may be monolithically fabricated in association with the ion-trap mass spectrometer. The photodiode array requires a small area compared to the ion-trap mass spectrometer size as the spectrometer typically possess a very small capacitance and a low power consumption.