The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2012

Filed:

Mar. 23, 2009
Applicants:

Raz Reshef, Tel-Aviv, IL;

Amos Fenigstein, Haifa, IL;

Tomer Leitner, Nahariya, IL;

Inventors:

Raz Reshef, Tel-Aviv, IL;

Amos Fenigstein, Haifa, IL;

Tomer Leitner, Nahariya, IL;

Assignee:

Tower Semiconductor Ltd., Migdal Haemek, IL;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

A CMOS image sensor in which each column of pixels is connected to a signal line that is coupled to a current source, and each pixel includes a charge amplifier having a common source configuration arranged such that a charge generated by its photodiode is amplified by the charge amplifier and transmitted to readout circuitry by way of the signal line. In one embodiment the charge amplifier utilizes an NMOS transistor to couple the photodiode charge in an inverted manner to the signal line while converting the charge to a voltage through a capacitor coupled between the signal line and photodiode (i.e., forming a feedback of the NMOS amplifier transistor).


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