The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2012
Filed:
Dec. 28, 2007
Applicants:
Min-suk Lee, Ichon-shi, KR;
Won-kyu Kim, Ichon-shi, KR;
Inventors:
Min-Suk Lee, Ichon-shi, KR;
Won-Kyu Kim, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Ichon-shi, Kyoungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a semiconductor device, the method includes forming gate patterns on a substrate, recessing the substrate between the gate patterns, thereby forming a first resulting structure including recesses, forming a gate spacer layer on an entire surface of the first resulting structure including the gate patterns, etching the gate spacer layer at a bottom of the recess, and forming a plug on the recess, thereby forming a second resulting structure including the plug.