The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2012
Filed:
Aug. 29, 2008
Applicants:
Philippe Meunier-bellard, Kortenberg, BE;
Anco Heringa, Waalre, NL;
Johannes Donkers, Valkenswaard, NL;
Inventors:
Philippe Meunier-Bellard, Kortenberg, BE;
Anco Heringa, Waalre, NL;
Johannes Donkers, Valkenswaard, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a transistor (), the method comprising forming a gate () on a substrate (), forming a spacer () on lateral side walls of the gate () and on an adjacent portion () of the substrate (), modifying material of the spacer () so that the modified spacer () covers only a lower portion () of the lateral side walls of the gate (), and providing source/drain regions () in the modified spacer ().