The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2012

Filed:

Sep. 14, 2007
Applicants:

Mitsutaka Nagae, Tokyo-to, JP;

Hironori Kobayashi, Tokyo-to, JP;

Masanao Matsuoka, Tokyo-to, JP;

Hiroyuki Honda, Tokyo-to, JP;

Inventors:

Mitsutaka Nagae, Tokyo-to, JP;

Hironori Kobayashi, Tokyo-to, JP;

Masanao Matsuoka, Tokyo-to, JP;

Hiroyuki Honda, Tokyo-to, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A manufacturing method of an organic semiconductor device including an organic semiconductor transistor formation process, wherein the process includes: an organic semiconductor layer formation step of using a substrate to form an organic semiconductor layer made of an organic semiconductor material on the substrate; a passivation layer formation step of forming pattern-wise on the organic semiconductor layer a passivation layer having an ability of shielding vacuum ultraviolet light and an organic semiconductor layer patterning step of irradiating vacuum ultraviolet light to the passivation layer and to the organic semiconductor layer to etch the organic semiconductor layer corresponding to a part where the passivation layer is not formed.


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