The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2012

Filed:

Jun. 06, 2011
Applicants:

Yoshiharu Hirakata, Kanagawa, JP;

Tetsuji Ishitani, Kanagawa, JP;

Shuji Fukai, Kanagawa, JP;

Ryota Imahayashi, Kanagawa, JP;

Inventors:

Yoshiharu Hirakata, Kanagawa, JP;

Tetsuji Ishitani, Kanagawa, JP;

Shuji Fukai, Kanagawa, JP;

Ryota Imahayashi, Kanagawa, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere.


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