The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2012
Filed:
Jun. 22, 2009
Shih Cheng Huang, Hsinchu, TW;
Po Min Tu, Chiayi County, TW;
Ying Chao Yeh, Taipei County, TW;
Wen Yu Lin, Taichung County, TW;
Peng Yi Wu, Taichung, TW;
Shih Hsiung Chan, Hsinchu County, TW;
Shih Cheng Huang, Hsinchu, TW;
Po Min Tu, Chiayi County, TW;
Ying Chao Yeh, Taipei County, TW;
Wen Yu Lin, Taichung County, TW;
Peng Yi Wu, Taichung, TW;
Shih Hsiung Chan, Hsinchu County, TW;
Advanced Optoelectronic Technology, Inc., Hsinchu Hsien, TW;
Abstract
A semiconductor device fabrication method is disclosed. A buffer layer is provided and a first semiconductor layer is formed on the buffer layer. Next, a first intermediate layer is formed on the first semiconductor layer by dopant with high concentration during an epitaxial process. A second semiconductor layer is overlaid on the first intermediate layer. A semiconductor light emitting device is grown on the second semiconductor layer. The formation of the intermediate layer and the second semiconductor layer is a set of steps.