The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2012
Filed:
Aug. 22, 2008
Harry P. Wong, Fremont, CA (US);
Vernon Wong, Mountain View, CA (US);
Christopher Charles Griffin, Milpitas, CA (US);
Mark Taskar, San Mateo, CA (US);
Harry P. Wong, Fremont, CA (US);
Vernon Wong, Mountain View, CA (US);
Christopher Charles Griffin, Milpitas, CA (US);
Mark Taskar, San Mateo, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A gas distribution system for supplying a gas mixture to a plasma process chamber is provided. A first valve arrangement is connected to upstream ends of a first gas line and a second gas line. A second valve arrangement is connected to downstream ends of the first gas line and the second gas line. A first gas distribution outlet line is connected between a gas supply and the first valve arrangement and a first chamber inlet line connected between the second valve arrangement and the plasma process chamber. A first evacuation line is connected to the first gas line at a location between the first valve arrangement and the second valve arrangement. A second evacuation line is connected to the second gas line at a location between the first valve arrangement and the second valve arrangement. The first evacuation line and second evacuation line are in fluid communication with a vacuum line. A controller is operable to actuate the first valve arrangement and second valve arrangement to selectively flow the gas mixture from the gas supply to the plasma process chamber through the first gas line while the second gas is selectively evacuated by the vacuum line; or to selectively flow the gas mixture from the gas supply to the plasma process chamber through the second gas line while the first gas line is selectively evacuated by the vacuum line.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile