The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2012

Filed:

Nov. 30, 2009
Applicants:

Douglas Edward Shelton, Wylie, TX (US);

John Howard Macpeak, Garland, TX (US);

Eddie Hearl Breashears, Lucas, TX (US);

Inventors:

Douglas Edward Shelton, Wylie, TX (US);

John Howard MacPeak, Garland, TX (US);

Eddie Hearl Breashears, Lucas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electrically erasable programmable read-only memory (EEPROM) with a ripple programming mode. Memory cells in an the EEPROM array include floating-gate transistors with control gates coupled to corresponding word lines, and drain electrodes coupled to corresponding bit lines. A memory cell is programmed by applying a high programming voltage to its control gate along with applying a high programming voltage to its drain. Multiple memory cells within a row can be programmed by applying the programming voltage to the word line of that row, during which multiple bit lines receive their programming voltage, without removing the word line programming voltage when changing the programming from one bit line to another.


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