The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Apr. 06, 2009
Film resistor with a constant temperature coefficient and production of a film resistor of this type
Günther Schultes, Saarbrücken, DE;
Dirk Göttel, Wallerfangen, DE;
Ralf Koppert, Salzgitter, DE;
Olivia Freitag-weber, Schawlbach, DE;
Ulf Werner, St. Ingbert, DE;
Wolfgang Brode, Hermsdorf, DE;
Günther Schultes, Saarbrücken, DE;
Dirk Göttel, Wallerfangen, DE;
Ralf Koppert, Salzgitter, DE;
Olivia Freitag-Weber, Schawlbach, DE;
Ulf Werner, St. Ingbert, DE;
Wolfgang Brode, Hermsdorf, DE;
Hochschule fur Technik und Wirtschaft des Sarlandes, Saarbrücken, DE;
Siegert Thinfilm Technology GmbH, Hermsdorf, DE;
Abstract
The invention relates to a film resistor () comprising a carbon-containing material () into which clusters () of conductive cluster material are introduced, wherein the conductive cluster material has a positive temperature coefficient. The clusters () are surrounded by a graphite casing and embedded in the carbon-containing material (). Furthermore, the cluster material is present in a thermodynamically stable phase. The invention also relates to a method for producing a film resistor (), wherein a PVD process is carried out on a carrier substrate () using a sputtering material under a reactive atmosphere of a carbon-containing gas, and therefore the carbon-containing gas is dissociated and a carbon-containing layer () is deposited on the carrier substrate (), with clusters () of the sputtering material being embedded in said carbon-containing layer, wherein the carbon-containing layer () is heated to a predetermined temperature while the PVD process is carried out, with the sputtering material or a compound of the sputtering material forming in a stable phase at said temperature.