The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Jan. 08, 2008
Masayoshi Tagami, Tokyo, JP;
Yoshihiro Hayashi, Tokyo, JP;
Munehiro Tada, Tokyo, JP;
Takahiro Onodera, Tokyo, JP;
Naoya Furutake, Tokyo, JP;
Makoto Ueki, Tokyo, JP;
Mari Amano, Tokyo, JP;
Masayoshi Tagami, Tokyo, JP;
Yoshihiro Hayashi, Tokyo, JP;
Munehiro Tada, Tokyo, JP;
Takahiro Onodera, Tokyo, JP;
Naoya Furutake, Tokyo, JP;
Makoto Ueki, Tokyo, JP;
Mari Amano, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device has a multilayer interconnection including a copper interconnection film formed in a predetermined area within an insulating film, a liner film, and a high-melting-point metal film. The copper interconnection film is polycrystalline, and crystal grains occupying 40% or more of an area of a unit interconnection surface among crystal grains forming the polycrystal are oriented to (111) in a substrate thickness direction. The copper interconnection film has crystal conformity with the noble metal liner film. In a case where the high-melting-point metal film is formed of Ti and the noble metal liner film is a Ru film, the high-melting-point metal of Ti dissolves into Ru in a solid state to form the noble metal liner. Thus, a copper interconnection is formed with both of Cu diffusion barrier characteristics and Cu crystal conformity.