The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Jan. 22, 2009
Luigi Colombo, Dallas, TX (US);
Sanjay Banerjee, Austin, TX (US);
Seyoung Kim, Austin, TX (US);
Emanuel Tutuc, Austin, TX (US);
Luigi Colombo, Dallas, TX (US);
Sanjay Banerjee, Austin, TX (US);
Seyoung Kim, Austin, TX (US);
Emanuel Tutuc, Austin, TX (US);
Board of Regents, The University of Texas System, Austin, TX (US);
Abstract
A method and semiconductor device for forming a uniformly thin dielectric layer on graphene. A metal or semiconductor layer is deposited on graphene which is located on the surface of a dielectric layer or on the surface of a substrate. The metal or semiconductor layer may act as a nucleation layer for graphene. The metal or semiconductor layer may be subjected to an oxidation process. A thin dielectric layer may then be formed on the graphene layer after the metal or semiconductor layer is oxidized. As a result of synthesizing a metal-oxide layer on graphene, which acts as a nucleation layer for the gate dielectric and buffer to graphene, a uniformly thin dielectric layer may be established on graphene without affecting the underlying characteristics of graphene.