The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Oct. 27, 2009
Applicant:
Georg Tempel, Munich, DE;
Inventor:
Georg Tempel, Munich, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01); H01L 27/12 (2006.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to a semiconductor component with stress-absorbing semiconductor layer (SA) and an associated fabrication method, a crystalline stress generator layer (SG) for generating a mechanical stress being formed on a carrier material (). An insulating stress transmission layer (), which transmits the mechanical stress which has been generated to a stress-absorbing semiconductor layer (SA), is formed at the surface of the stress generator layer (SG), with the result that in addition to improved charge carrier mobility, improved electrical properties of the semiconductor component are also obtained.