The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Apr. 22, 2010
Christopher Sean Olsen, Fremont, CA (US);
Tze Wing Poon, Sunnyvale, CA (US);
Udayan Ganguly, Sunnyvale, CA (US);
Johanes Swenberg, Los Gatos, CA (US);
Christopher Sean Olsen, Fremont, CA (US);
Tze Wing Poon, Sunnyvale, CA (US);
Udayan Ganguly, Sunnyvale, CA (US);
Johanes Swenberg, Los Gatos, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A flash memory device comprises a substrate comprising silicon with a silicon dioxide layer thereon. A silicon-oxygen-nitrogen layer is on the silicon dioxide layer, and the silicon-oxygen-nitrogen layer comprises a shaped concentration level profile of oxygen through the thickness of the layer. A blocking dielectric layer is on the silicon-oxygen-nitrogen layer, and a gate electrode is on the blocking dielectric layer. Oxygen ions can be implanted into a silicon nitride layer to form the silicon-oxygen-nitrogen layer.