The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8198645 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 12, 2012

Filed:

Dec. 07, 2006
Applicant:

Mitsuhiko Sakai, Kyoto, JP;

Inventor:

Mitsuhiko Sakai, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto-fu, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

To provide a semiconductor light emitting device with a light extraction efficiency increased and a method for manufacturing the semiconductor light emitting device. A semiconductor light emitting deviceincludes a supporting substrateand a semiconductor stackincluding an MQW active layeremitting light and an n-GaN layerat the top. In the upper surface of the n-GaN layerof the semiconductor attack, a plurality of conical protrusionsare formed. The protrusionsare formed so that an average Wof widths W of bottom surfaces of protrusionssatisfies: W>=λ/n, where λ is wavelength of light emitted from the active layer and n is a refractive index of the n-GaN layer


Find Patent Forward Citations

Sakai, Mitsuhiko. (2012). Semiconductor light emitting device and method for manufacturing the same (U.S. Patent No. 8198645). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8198645

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