The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Mar. 05, 2008
Jumpei Hayashi, Yokohama, JP;
Takanori Matsuda, Chofu, JP;
Tetsuro Fukui, Yokohama, JP;
Hiroshi Funakubo, Yokohama, JP;
Jumpei Hayashi, Yokohama, JP;
Takanori Matsuda, Chofu, JP;
Tetsuro Fukui, Yokohama, JP;
Hiroshi Funakubo, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Tokyo Institute of Technology, Tokyo, JP;
Abstract
There are disclosed an epitaxial film, comprising: heating an Si substrate provided with an SiOlayer with a film thickness of 1.0 nm or more to 10 nm or less on a surface of the substrate; and forming on the SiOlayer by use of a metal target represented by the following composition formula:yA(1−y)B  (1),in which A is one or more elements selected from the group consisting of rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or more to 0.20 or less, the epitaxial film represented by the following composition formula:xAO−(1−x)BO  (2),in which A and B are respectively same elements as A and B of the composition formula (1), and x is a numeric value of 0.010 or more to 0.035 or less.