The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2012

Filed:

Dec. 21, 2010
Applicants:

Jose Ignacio Del Agua Borniquel, Kessel-Lo, BE;

Tze Poon, Sunnyvale, CA (US);

Robert Schreutelkamp, Leuven, BE;

Majeed Foad, Sunnyvale, CA (US);

Inventors:

Jose Ignacio Del Agua Borniquel, Kessel-Lo, BE;

Tze Poon, Sunnyvale, CA (US);

Robert Schreutelkamp, Leuven, BE;

Majeed Foad, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer comprising dispersed gas pockets is deposited on the ion implanted region.


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