The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Nov. 13, 2009
Joo-sung Park, Suwon-si, KR;
Se-keun Park, Suwon-si, KR;
Joo-sung Park, Suwon-si, KR;
Se-keun Park, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device including forming a plurality of gate structures on a semiconductor substrate, forming a plurality of impurity regions in the semiconductor substrate at sides of the gate structures, forming a dielectric layer on the semiconductor substrate having the gate structures, forming contact holes by etching the dielectric layer to expose parts of the impurity regions at sides of the gate structures, directly implanting impurity ions into the exposed parts of the impurity regions via the contact holes by using the gate structures as ion implanting masks, wherein the impurity ions prevent impurities doped in the impurity regions from diffusing to channel regions of the gate structures, and forming conductive plugs in the contact holes.