The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Oct. 21, 2010
Sang Ho Yoon, Seongnam-si, KR;
Su Yeol Lee, Seongnam-si, KR;
Doo Go Baik, Suwon-si, KR;
Seok Beom Choi, Daejeon, KR;
Tae Sung Jang, Suwon-si, KR;
Jong Gun Woo, Suwon-si, KR;
Sang Ho Yoon, Seongnam-si, KR;
Su Yeol Lee, Seongnam-si, KR;
Doo Go Baik, Suwon-si, KR;
Seok Beom Choi, Daejeon, KR;
Tae Sung Jang, Suwon-si, KR;
Jong Gun Woo, Suwon-si, KR;
Samsung LED Co., Ltd., Gyunggi-do, KR;
Abstract
A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile