The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Mar. 13, 2009
Ryoichi Aoyama, Tokyo, JP;
Ryoichi Aoyama, Tokyo, JP;
Abstract
A mask pattern forming method which can form desired resist patterns accurately and stably on a substrate material like SiC having transparency to light. The method comprising forming a light reflective film on a semiconductor substrate having transparency to light; forming a photo-resist on the light reflective film; projecting exposure light through a master mask onto a focal position adjusted based on light reflected by the light reflective film when projecting focus detecting light onto the semiconductor substrate, thereby exposing the photo-resist; and removing exposed portions or portions other than the exposed portions of the photo-resist so as to pattern the photo-resist.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile