The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Nov. 21, 2005
Diwakar Garg, Emmaus, PA (US);
Philip Bruce Henderson, Allentown, PA (US);
Daniel Joseph Tempel, Macungie, PA (US);
Thomas N. Jackson, State College, PA (US);
Jie Sun, State College, PA (US);
Diwakar Garg, Emmaus, PA (US);
Philip Bruce Henderson, Allentown, PA (US);
Daniel Joseph Tempel, Macungie, PA (US);
Thomas N. Jackson, State College, PA (US);
Jie Sun, State College, PA (US);
Air Products and Chemicals, Inc., Allentown, PA (US);
Abstract
The present invention discloses plasma enhanced chemical vapor deposition (PECVD) process for depositing n-type and p-type zinc oxide-based transparent conducting oxides (TCOs) at low temperatures with excellent optical and electrical properties on glass and temperature sensitive materials such as plastics and polymers. Specifically, it discloses PECVD process for depositing n-type ZnO by doping it with B or F and p-type ZnO by doping it with nitrogen excellent optical and electrical properties on glass and temperature sensitive materials such as plastics and polymers for TCO application. The process utilizes a mixture of volatile zinc compound, argon and/or helium as a diluent gas, carbon dioxide as an oxidant, and a dopant or reactant to deposit the desired ZnO-based TCOs.