The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Mar. 04, 2005
Mitsunori Ishisaka, Toyama, JP;
Toshimitsu Miyata, Toyama, JP;
Mitsunori Ishisaka, Toyama, JP;
Toshimitsu Miyata, Toyama, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
Wafer contamination is prevented, while preventing damage to a high-frequency electrode and a susceptor. A main bodyof the susceptorof an MMT apparatus is composed of a heater arranging plate, an electrode arranging plate, and a supporting plateall made from quartz. A circular electrode arranging holewith a fixed depth is concentrically formed on the upper surface of the electrode arranging plate, and quadrangular pillarsare formed protruding in a matrix on the bottom of the electrode arranging hole. Multiple insertion holesare formed in a disk-shaped high-frequency electrode, and the high-frequency electrodeis installed in the electrode arranging holeby inserting each pillarinto each insertion hole. The gaps Sa and Sb are provided between the high-frequency electrodeand the electrode arranging plate. The pillarboosts the strength of the electrode arranging plate. Damage to the high-frequency electrode is prevented even if the thermal expansion coefficient of the high-frequency electrode is larger than that of the electrode arranging plate, since the gaps absorb the thermal expansion differential.