The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Mar. 16, 2009
Peter Seesink, Oudoorp, NL;
Horst Obermeier, Minden, DE;
Omar Abed, Moorpark, CA (US);
Dan Rodriguez, Moorpark, CA (US);
Robert Hunter, Ventura, CA (US);
Calin Miclaus, Camarillo, CA (US);
Peter Seesink, Oudoorp, NL;
Horst Obermeier, Minden, DE;
Omar Abed, Moorpark, CA (US);
Dan Rodriguez, Moorpark, CA (US);
Robert Hunter, Ventura, CA (US);
Calin Miclaus, Camarillo, CA (US);
Kavlico Corporation, Moorpark, unknown;
Abstract
Described herein is a method for integrating MEMS with submicron semiconductor electrical circuits such as CMOS to provide more complex signal processing, on-chip calibration and integration with RF technologies. A MEMS sensor is provided having an upper layer, an insulating layer into which a cavity has been formed and a handle layer. The upper layer acts as both the substrate of the semiconductor electrical circuit and as the active MEMS element. The remainder of the circuitry is fabricated either in or on the upper layer. In a preferred method of the present invention a first wafer assembly and a second wafer assembly are fabricated such that a MEMS sensor and the substrate of at least one semiconductive electrical circuit is formed.