The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2012

Filed:

Dec. 21, 2009
Applicants:

Ranieri Guerra, San Giovanni la Punta, IT;

Giuseppe Palmisano, San Giovanni la Punta, IT;

Inventors:

Ranieri Guerra, San Giovanni la Punta, IT;

Giuseppe Palmisano, San Giovanni la Punta, IT;

Assignee:

STMicroelectronics S.R.L., Agrate Brianza (MI), IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

The disclosure relates to an electronic differential amplification device integrated on a semiconductor chip. The device may include first and second transistors having respective source terminals connected to a first potential, and drain terminals to receive a first differential current signal. The device may include third and fourth transistors having respective source terminals connected to the first potential, and drain terminals to provide a second differential current signal to a load obtained by amplifying the first signal. The third and fourth transistors may have a respective gate terminal connected to the drain terminal of the first and the second transistors, respectively, in order to form current mirrors with the latter. The device is characterized in that the first and second transistors may have the respective gate terminals electrically connected to a common terminal, and at least one first and at least one second resistive elements are connected between the common terminal and the drain terminals of the first and the second transistors, respectively.


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