The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2012

Filed:

Dec. 11, 2008
Applicants:

Hye-jin Kim, Seoul, KR;

Kwang-jin Lee, Hwaseong-si, KR;

Du-eung Kim, Yongin-si, KR;

Hung-jun an, Hwaseong-si, KR;

Inventors:

Hye-Jin Kim, Seoul, KR;

Kwang-Jin Lee, Hwaseong-si, KR;

Du-Eung Kim, Yongin-si, KR;

Hung-Jun An, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory device using a variable resistive element includes a memory cell array having a plurality of non-volatile memory cells, a first voltage generator generating a first voltage, a voltage pad receiving an external voltage that has a level higher than the first voltage, a sense amplifier supplied with the first voltage and reading data from the non-volatile memory cells selected from the memory cell array, and a write driver supplied with the external voltage and writing data to the non-volatile memory cells selected from the memory cell array.


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