The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Jun. 09, 2010
Kazutaka Yamane, Kanagawa, JP;
Masanori Hosomi, Kanagawa, JP;
Hiroshi Kano, Kanagawa, JP;
Hiroyuki Ohmori, Kanagawa, JP;
Minoru Ikarashi, Kanagawa, JP;
Tetsuya Yamamoto, Kanagawa, JP;
Kazuhiro Bessho, Kanagawa, JP;
Yutaka Higo, Kanagawa, JP;
Yuki Oishi, Kanagawa, JP;
Shinichiro Kusunoki, Kanagawa, JP;
Kazutaka Yamane, Kanagawa, JP;
Masanori Hosomi, Kanagawa, JP;
Hiroshi Kano, Kanagawa, JP;
Hiroyuki Ohmori, Kanagawa, JP;
Minoru Ikarashi, Kanagawa, JP;
Tetsuya Yamamoto, Kanagawa, JP;
Kazuhiro Bessho, Kanagawa, JP;
Yutaka Higo, Kanagawa, JP;
Yuki Oishi, Kanagawa, JP;
Shinichiro Kusunoki, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer.