The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Jun. 05, 2008
Applicants:
Hee Bok Kang, Chungcheongbuk-do, KR;
Suk Kyoung Hong, Gyeonggi-do, KR;
Inventors:
Hee Bok Kang, Chungcheongbuk-do, KR;
Suk Kyoung Hong, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Kyoungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A phase change memory device includes a cell array unit having a phase change resistance cell positioned at an intersection of a word line and a bit line. A write driving unit is configured to generate a single write voltage to the cell array unit when data to be written is a first data and is configured to generate a plurality of write voltages selectively when the data is a second data.
Kang, Hee. (2012). Phase change memory device having multiple reset signals and operating method thereof (U.S. Patent No. 8194440). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8194440
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