The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Mar. 15, 2010
Applicants:
James Herr, San Jose, CA (US);
Zhizhong Hou, Fremont, CA (US);
Christopher Bruce Umminger, Mountain View, CA (US);
Inventors:
James Herr, San Jose, CA (US);
Zhizhong Hou, Fremont, CA (US);
Christopher Bruce Umminger, Mountain View, CA (US);
Assignee:
Linear Technology Corporation, Milpitas, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/08 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of and system for controlling the inrush current generated in a MOSFET of an inrush current control system, wherein the MOSFET includes a source, gate and drain. The dV/dt at the drain of the MOSFET is controlled so as to set the inrush current level as a function of dV/dt, independent of current limit without requiring a separate capacitor connected between the gate and drain of the MOSFET so that the MOSFET can turn on and off more quickly.