The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Oct. 14, 2009
Shaoping LI, San Ramon, CA (US);
Yimin Guo, San Jose, CA (US);
Feng Liu, San Ramon, CA (US);
Wei Zhang, Fremont, CA (US);
Sining Mao, Fremont, CA (US);
Shaoping Li, San Ramon, CA (US);
Yimin Guo, San Jose, CA (US);
Feng Liu, San Ramon, CA (US);
Wei Zhang, Fremont, CA (US);
Sining Mao, Fremont, CA (US);
Western Digital (Fremont), LLC, Fremont, CA (US);
Abstract
A tunneling magnetoresistance (TMR) read head and a method of producing the same are disclosed. A free layer having a free layer stripe height is provided, the free layer having a first side and a second side. A tunneling barrier layer is formed adjacent to the first side of the free layer, the tunneling barrier layer having a first side and a second side, the second side of the tunneling barrier layer facing the first side of the free layer. A pinned stack is formed adjacent to the first side of the tunneling barrier layer. The pinned stack comprises at least one magnetic layer having a current path stripe height that is less than the free layer stripe height.