The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
May. 15, 2008
Applicants:
Timothy Henderson, Portland, OR (US);
Jeremy Middleton, Beaverton, OR (US);
John Hitt, Plano, TX (US);
Inventors:
Timothy Henderson, Portland, OR (US);
Jeremy Middleton, Beaverton, OR (US);
John Hitt, Plano, TX (US);
Assignee:
TriQuint Semiconductor, Inc., Hillsboro, OR (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
Abstract
A heterojunction bipolar transistor (HBT) device and system having electrostatic discharge ruggedness, and methods for making the same, are disclosed. An HBT device having electrostatic discharge ruggedness may include one or more emitter fingers including an emitter layer, a transition layer formed over the emitter layer, and an emitter cap layer formed over the transition layer.