The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Feb. 07, 2008
Louis C. Hsu, Fishkill, NY (US);
Xu Ouyang, Hopewell Junction, NY (US);
Ping-chuan Wang, Hopewell Junction, NY (US);
Zhijian J. Yang, Stormville, NY (US);
Louis C. Hsu, Fishkill, NY (US);
Xu Ouyang, Hopewell Junction, NY (US);
Ping-Chuan Wang, Hopewell Junction, NY (US);
Zhijian J. Yang, Stormville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A flash memory structure having an enhanced capacitive coupling coefficient ratio (CCCR) may be fabricated in a self-aligned manner while using a semiconductor substrate that has an active region that is recessed within an aperture with respect to an isolation region that surrounds the active region. The flash memory structure includes a floating gate that does not rise above the isolation region, and that preferably consists of a single layer that has a U shape. The U shape facilitates the enhanced capacitive coupling coefficient ratio.