The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2012

Filed:

Sep. 22, 2009
Applicants:

Mikael T Bjoerk, Affoltern am Albis, CH;

Joachim Knoch, Obfelden, CH;

Heike E Riel, Baech, CH;

Walter Heinrich Riess, Thalwil, CH;

Heinz Schmid, Waedenswil, CH;

Inventors:

Mikael T Bjoerk, Affoltern am Albis, CH;

Joachim Knoch, Obfelden, CH;

Heike E Riel, Baech, CH;

Walter Heinrich Riess, Thalwil, CH;

Heinz Schmid, Waedenswil, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2012.01); H01L 31/109 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electronic device and method of manufacturing the device. The device includes a semiconducting region, which can be a nanowire, a first contact electrically coupled to the semiconducting region, and at least one second contact capacitively coupled to the semiconducting region. At least a portion of the semiconducting region between the first contact and the second contact is covered with a dipole layer. The dipole layer can act as a local gate on the semiconducting region to enhance the electric properties of the device.


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