The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Feb. 12, 2010
Yoon-dong Park, Yongin-si, KR;
David Andrew Barclay Miller, Stanford, CA (US);
Young-gu Jin, Byeongjeom-Hwaseong-si, KR;
In-sung Joe, Seoul, KR;
Yoon-dong Park, Yongin-si, KR;
David Andrew Barclay Miller, Stanford, CA (US);
Young-gu Jin, Byeongjeom-Hwaseong-si, KR;
In-sung Joe, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
Silicon photodetectors using near-infrared dipole antennas. The photodetectors include a silicon region formed on a semiconductor substrate, dipole antenna forming two arms that are spaced apart with the silicon region therebetween and inducing an electromagnetic wave signal of incident light, and electrodes disposed in a vertical direction of the dipole antenna and spaced apart with the silicon region therebetween, where a critical bias voltage is applied to the electrodes to induce an avalanche gain operation in the silicon region.