The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Dec. 23, 2010
Suk Joong Kim, Gyeonggi-do, KR;
Suk Joong Kim, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method of forming metal lines of a semiconductor device includes forming an etch stop layer over a semiconductor substrate over which underlying structures are formed, forming an insulating layer over the etch stop layer, etching the etch stop layer and the insulating layer to form trenches through which the underlying structures are exposed, shrinking the insulating layer by using a thermal treatment process in order to widen openings of the trenches, and filling the trenches with a conductive material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile