The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Sep. 09, 2010
Kazuaki Iwasawa, Kanagawa-ken, JP;
Shogo Matsuo, Oita-ken, JP;
Kenichiro Toratani, Kanagawa-ken, JP;
Kazuaki Iwasawa, Kanagawa-ken, JP;
Shogo Matsuo, Oita-ken, JP;
Kenichiro Toratani, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a method of fabricating a semiconductor device is disclosed. The method includes the steps of: forming a tunnel insulating film on a semiconductor substrate; forming a floating gate electrode on the tunnel insulating film; and forming a silicon nitride film including a low-density silicon nitride film and a high-density silicon nitride film on the floating gate electrode. The method also includes the steps of: forming an isolation trench thereby to expose the low-density silicon nitride film exposed at least in a portion of a side surface of the isolation trench; forming an isolating insulating film covering an internal surface of the isolation trench; removing the silicon nitride film; and forming an interelectrode insulating film and a control gate electrode both covering the floating gate electrode and the isolating insulating film.