The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Jan. 04, 2010
Man-hyoung Ryoo, Gyeonggi-do, KR;
Gi-sung Yeo, Seoul, KR;
Si-hyeung Lee, Gyeonggi-do, KR;
Gyu-chul Kim, Gyeonggi-do, KR;
Sung-gon Jung, Seoul, KR;
Chang-min Park, Seoul, KR;
Hoo-sung Cho, Seoul, KR;
Man-Hyoung Ryoo, Gyeonggi-do, KR;
Gi-Sung Yeo, Seoul, KR;
Si-Hyeung Lee, Gyeonggi-do, KR;
Gyu-Chul Kim, Gyeonggi-do, KR;
Sung-Gon Jung, Seoul, KR;
Chang-Min Park, Seoul, KR;
Hoo-Sung Cho, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
According to some embodiments of the invention, a substrate doped with a P type impurity is provided. An N type impurity is doped into the substrate to divide the substrate into a P type impurity region and an N type impurity region. Active patterns having a first pitch are formed in the P type and N type impurity regions. Gate patterns having a second pitch are formed on the active patterns in a direction substantially perpendicular to the active patterns. Other embodiments are described and claimed.