The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Nov. 02, 2009
Paul Malachy Daly, Limerick, IE;
Andrew David Bain, Limerick, IE;
Derek Frederick Bowers, Los Altos Hills, CA (US);
Anne Maria Deignan, Limerick, IE;
Michael Thomas Dunbar, San Jose, CA (US);
Patrick Martin Mcguinness, Limerick, IE;
Bernard Patrick Stenson, Limerick, IE;
William Allan Lane, Cork, IE;
Paul Malachy Daly, Limerick, IE;
Andrew David Bain, Limerick, IE;
Derek Frederick Bowers, Los Altos Hills, CA (US);
Anne Maria Deignan, Limerick, IE;
Michael Thomas Dunbar, San Jose, CA (US);
Patrick Martin McGuinness, Limerick, IE;
Bernard Patrick Stenson, Limerick, IE;
William Allan Lane, Cork, IE;
Analog Devices, Inc., Norwood, MA (US);
Abstract
A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.