The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Jan. 06, 2011
Ryoji Hiroyama, Kyo-tanabe, JP;
Daijiro Inoue, Kyoto, JP;
Yasuyuki Bessho, Uji, JP;
Masayuki Hata, Kadoma, JP;
Ryoji Hiroyama, Kyo-tanabe, JP;
Daijiro Inoue, Kyoto, JP;
Yasuyuki Bessho, Uji, JP;
Masayuki Hata, Kadoma, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.