The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Dec. 08, 2009
Applicant:
Yukihiro Kita, Tokyo, JP;
Inventor:
Yukihiro Kita, Tokyo, JP;
Assignee:
Oki Semiconductor Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of producing a semiconductor optical sensor element includes the steps of: forming an oxide film on a silicon carbide substrate; forming a gate electrode layer on the oxide film; patterning the gate electrode layer to form a gate electrode; and processing thermally the gate electrode layer or the gate electrode under an oxidation environment. Further, the gate electrode layer or the gate electrode is thermally processed under the oxidation environment at a temperature between 750° C. and 900° C.