The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
May. 20, 2009
Nobuhiko Umezu, Kanagawa, JP;
Koichi Tsukihara, Kanagawa, JP;
Hirohisa Amago, Kanagawa, JP;
Go Matsunobu, Kanagawa, JP;
Katsuya Shirai, Kanagawa, JP;
Nobuhiko Umezu, Kanagawa, JP;
Koichi Tsukihara, Kanagawa, JP;
Hirohisa Amago, Kanagawa, JP;
Go Matsunobu, Kanagawa, JP;
Katsuya Shirai, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method of forming a semiconductor thin film includes the steps of: forming an amorphous semiconductor thin film on a substrate; forming a crystalline semiconductor thin film partially in each element region by applying laser light to the amorphous semiconductor thin film to selectively perform a heating process on the amorphous semiconductor thin film, thereby crystallizing the amorphous semiconductor thin film in a region irradiated with the laser light; and inspecting the crystallinity degree of the crystalline semiconductor thin film. The step of inspecting includes the steps of determining a contrast between the luminance of a crystallized region and the luminance of a non-crystallized region by applying light to the crystalline semiconductor thin film and the amorphous semiconductor thin film, and performing screening of the crystalline semiconductor thin film on the basis of the determined contrast.