The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2012

Filed:

May. 12, 2010
Applicants:

Chu-chi Ting, Minhsiung Township, TW;

Chia-hao Tsai, Minhsiung Township, TW;

Hsiang-chen Wang, Minhsiung Township, TW;

Inventors:

Chu-Chi Ting, Minhsiung Township, TW;

Chia-Hao Tsai, Minhsiung Township, TW;

Hsiang-Chen Wang, Minhsiung Township, TW;

Assignee:

National Chung Cheng University, Minhsiung Township, Chiayi County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/08 (2006.01); B05D 5/12 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

The tin-doped indium oxide thin film in accordance with the present invention has a tin-doped indium oxide, yttrium ions and europium ions, wherein the yttrium ions are proportional to 0.1-10 mol % of the tin-doped indium oxide while the europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide. The method in accordance with the present invention comprises preparing a tin-doped indium oxide; and doping yttrium ions proportional to 0.1-10 mol % of the tin-doped indium and europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide in the tin-doped indium oxide using a film-manufacturing method.


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