The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Dec. 19, 2008
Migaku Takahashi, Sendai, JP;
Masakiyo Tsunoda, Sendai, JP;
Koujiro Komagaki, Kawasaki, JO;
Yuji Uehara, Kawasaki, JP;
Kazuyuki Sunaga, Kawasaki, JP;
Migaku Takahashi, Sendai, JP;
Masakiyo Tsunoda, Sendai, JP;
Koujiro Komagaki, Kawasaki, JO;
Yuji Uehara, Kawasaki, JP;
Kazuyuki Sunaga, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Tohoku University, Sendai, JP;
Abstract
The method of the present invention provides a magnetoresistance effect element, which is capable of having a high MR ratio, corresponding to high density recording and being suitably applied to a magnetoresistance device even though a barrier layer is thinned to reduce resistance of the magnetoresistance effect element. The method of producing the magnetoresistance effect element, which includes the barrier layer composed of an oxidized metal, a first magnetic layer contacting one of surfaces of the barrier layer and a second magnetic layer contacting the other surface thereof, comprises the steps of: laminating the barrier layer on the first magnetic layer with using a target composed of the oxidized metal; and laminating the second magnetic layer on the barrier layer. The barrier layer is annealed before laminating the second magnetic layer thereon.